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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUT11APX DESCRIPTION *High Voltage *High Speed Switching * APPLICATIONS *Converters *Inverters *Switching regulators *Motor control systems ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL VCES VCEO VEBO IC ICM IB B PARAMETER Collector-Emitter Voltage VBE= 0 Collector-Emitter Voltage Emitter-Base Voltage VALUE 1000 450 9 UNIT V Collector Current-Continuous Collector Current-Peak Base Current ww w scs .i V V 5 A 10 2 4 32 150 -65~150 A A A .cn mi e IBM PC Tj Tstg Base Current-Peak Collector Power Dissipation @TC=25 Junction Temperature Storage Temperature Range W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 3.95 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL VCEO(SUS) VCE(sat) VBE(sat) ICES IEBO hFE-1 hFE-2 hFE-3 hFE-4 PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain DC Current Gain CONDITIONS IC= 0.1A; IB= 0 IC= 3A; IB= 0.6A B BUT11APX MIN 450 TYP. MAX UNIT V 1.5 1.3 1.0 2.0 10 10 14 10 8 35 35 17 12 V V mA mA IC= 2.5A; IB= 0.33A VCE= 1000V; VBE= 0 VCE= 1000V; VBE= 0; Tj= 125 VEB= 9V; IC= 0 Switching Times; Resistive Load Turn-on Time Storage Time Fall Time ton ts tf w w w. .cn mi cse is IC= 5mA; VCE= 5V IC= 0.5A; VCE= 5V IC= 2.5A; VCE= 5V IC= 3.5A; VCE= 5V IC= 2.5A; IB1= -IB2= 0.5A; RL= 75; VBB2= 4V 0.7 4.0 0.45 s s s isc Websitewww.iscsemi.cn |
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